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Stackable, Fast Plasma Spreading (FPS) SiC Thyristor Modules with Soldered Contacts

Award Information
Agency: Department of Defense
Branch: Army
Contract: W15QKN-09-C-0142
Agency Tracking Number: A082-043-1706
Amount: $1,396,860.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: A08-043
Solicitation Number: 2008.2
Timeline
Solicitation Year: 2008
Award Year: 2010
Award Start Date (Proposal Award Date): 2009-09-29
Award End Date (Contract End Date): 2011-09-29
Small Business Information
43670 Trade Center Place Suite 155
Dulles, VA 20166
United States
DUNS: 148969137
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Ranbir Singh
 President
 (703) 996-8200
 ranbir.singh@genesicsemi.com
Business Contact
 Ranbir Singh
Title: President
Phone: (703) 996-8200
Email: ranbir.singh@genesicsemi.com
Research Institution
N/A
Abstract

The extremely challenging speed <10 nanoseconds) and voltage (>10 kV) specifications of High Power Microwave (HPM), Railgun, and Electro-Magnetic Armor circuits require the development of revolutionary new semiconductor switch technology that promises a 3-10X reduction in the series connected stages. The inherent high voltage and high frequency capability of SiC makes this project relevant and timely. In the Phase I, a nearly-ideal blocking voltage SiC Thyristor with improved Gate-Anode design was found to offer the best solution for the challenging requirements. Extensive analytical and 2D device simulations were conducted to accurately model SiC FPS Thyristor devices and their performance was verified. Important Gate-Anode structures were fabricated in a commercial semiconductor foundry to demonstrate critical technology that enable the realization of these high voltage SiC devices. Low inductance power packaging technology was explored that allows reliable packaging of up to 28 kV devices. In Phase II SBIR program, five batches of SiC FPS Thyristor devices will be designed and fabricated with successively increasing voltage and current capabilities to meet the program objectives. A high volume Silicon Carbide foundry will allow economical production of SiC FPS Thyristors for successful commercialization with partners. A comprehensive test plan meeting military standards will be implemented.

* Information listed above is at the time of submission. *

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