Development of Radiation Hardened Type II SLS for Smart IR FPA for Space Applications
Agency / Branch:
DOD / MDA
This Phase I SBIR effort will develop low dark-current and high radiation-hardness infrared detector technology based on unipolar barrier structure Type II strained-layer superlattices. The design architectures and process technologies developed to minimize dark current are expected to enhance device performance, especially in the presence of the degradation mechanisms anticipated in a hostile radiation environment. The rad-hard SLS design efforts will be done by leading experts at the University of New Mexico (UNM) and Raytheon Vision Systems (RVS). The advanced Sb-based SLS MBE will be done by IntelliEPI using proprietary in-situ tools to characterize and optimize the growth. Device fabrication and testing will be done by UNM and RVS, with radiation exposure performed by Air Force Research Laboratory, Kirtland Air Force base.
Small Business Information at Submission:
Intelligent Epitaxy Technology, Inc.
1250 E. Collins Blvd. Richardson, TX 75081
Number of Employees: