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Epi Ready InSb Substrate for HgCdTe Infrared Detectors by MBE

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
97610
Program Year/Program:
2010 / SBIR
Agency Tracking Number:
A092-094-0571
Solicitation Year:
N/A
Solicitation Topic Code:
Army 09-094
Solicitation Number:
N/A
Small Business Information
INTELLIGENT EPITAXY TECHNOLOGY, INC.
1250 E. Collins Blvd. Richardson, TX -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2010
Title: Epi Ready InSb Substrate for HgCdTe Infrared Detectors by MBE
Agency / Branch: DOD / ARMY
Contract: W15P7T-10-C-S203
Award Amount: $70,000.00
 

Abstract:

This Phase I SBIR effort will evaluate the preparation of epi-ready 211B InSb substrate to be used as starting substrate for the growth of high quality HgCdTe epi materials. The InSb substrate will be prepared via production III-V Molecular Beam Epitaxy (MBE) reactor. The 211B InSb substrate is chosen because it''s lattice matched to HgCdTe. Texas State University and Teledyne will assist with the growth of HgCdTe on the especially prepared InSb substrate for evaluation of the InSb substrate preparation. Materials characterization will be performed to evaluate the quality of HgCdTe epi materials grown on InSb. Critical materials development issues will be identified.

Principal Investigator:

Paul Pinsukanjana
VP of Tech./Bus Dev.
9722340068
pinsu@intelliepi.com

Business Contact:

Yung-Chung Kao
President/CEO
9722340068
maki@signatureresearchinc.com
Small Business Information at Submission:

Intelligent Epitaxy Technology, Inc.
1250 E. Collins Blvd. Richardson, TX 75081

EIN/Tax ID: 752782937
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No