Epi Ready InSb Substrate for HgCdTe Infrared Detectors by MBE
Agency / Branch:
DOD / ARMY
This Phase I SBIR effort will evaluate the preparation of epi-ready 211B InSb substrate to be used as starting substrate for the growth of high quality HgCdTe epi materials. The InSb substrate will be prepared via production III-V Molecular Beam Epitaxy (MBE) reactor. The 211B InSb substrate is chosen because it''s lattice matched to HgCdTe. Texas State University and Teledyne will assist with the growth of HgCdTe on the especially prepared InSb substrate for evaluation of the InSb substrate preparation. Materials characterization will be performed to evaluate the quality of HgCdTe epi materials grown on InSb. Critical materials development issues will be identified.
Small Business Information at Submission:
Intelligent Epitaxy Technology, Inc.
1250 E. Collins Blvd. Richardson, TX 75081
Number of Employees: