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VLSI Compatible Silicon-on-Insulator Plasmonic Components
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2010Title: VLSI Compatible Silicon-on-Insulator Plasmonic ComponentsAgency / Branch: DOD / USAFContract: FA9550-09-C-0209Award Amount: $100,000.00
Abstract:
This Small Business Technology Transfer Phase I project will develop ultradense, low-power plasmonic integration components and devices for on-chip manipulation and processing of optical signals. Both passive and active components will be studied. Detailed performance predictions will be obtained through finite element modeling (FEM) of the harmonic Maxwell's equations. The FEM provides detailed field information, including E field, B field, energy density, and time dependent information with subwavelength resolution, which greatly aids in understanding the underlying physical mechanisms. Test structures will be made using well established nanofabrication facilities, and characterized with spectral and polarization sensitive far field techniques. BENEFIT: The availability of ultradense plasmonic integration components that are compatible with VLSI processing will allow for optical manipulation to be performed on-chip. New and more powerful optoelectronic devices will be enabled by these developments.Small Business Information at Submission:Research Institution Information:ITN Energy Systems, Inc.
8130 Shaffer Parkway Littleton, CO 80127EIN/Tax ID: 841582609DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: NoColorado School of Mines
1500 Illinois St.
Golden, CO 80401Contact: Ralph L. BrownContact Phone: 3032733538
Award Information
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Agency: Department of Defense |
Branch: Air Force |
Award ID: 94930 |
Program Year/Program: 2010 / STTR |
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Agency Tracking Number: F08B-T18-0215 |
Solicitation Year: N/A |
Solicitation Topic Code: AF 08TT18 |
Solicitation Number: N/A |