Electrically-Pumped III-Nitride Intersubband lasers
Kyma Technologies, a leading supplier of low defect density GaN substrates, is teamed together with the three subcontractors at Princeton University, Lehigh University and Purdue University where some of the best lattice-matched quaternary (In,Ga,Al)N or ternary structures in the world have been produced, to propose the development of the worlds first high-performance III-N quantum cascade lasers operating in the 1.55-micron region. Phase I was focused on development of multi-quantum well pseudomorphically grown structures on low-defect density bulk GaN substrates, showing strong intersubband absorption near 2 fYm and thus demonstrated feasibility and laid the foundation for Phase II wherein high quality 1.55 fYm QCLs will be developed. The diverse and highly complimentary team formed for this effort has shown excellent results in the timeframe of Phase 1 project and intent to employ in a potential Phase 2 effort a multipronged and novel technical approach which examines both polar and non-polar substrate orientations, benefits from optimization of substrate surface mis-orientation(s), and employs strain-compensation heterostructure engineering to enable the development of state-of-the-art epitaxial wafer designs with ultra-high structural quality. A 3-pronged commercialization path benefiting from simultaneous market connection at the substrate, epiwafer, and device levels ensures rapid commercial adoption of this exciting new technology.
Small Business Information at Submission:
Kyma Technologies, Inc.
8829 Midway West Road Raleigh, NC -
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