USA flag logo/image

An Official Website of the United States Government

Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate…

Award Information

Agency:
Department of Defense
Branch:
N/A
Award ID:
Program Year/Program:
2013 / SBIR
Agency Tracking Number:
A2-5337
Solicitation Year:
2012
Solicitation Topic Code:
A12-024
Solicitation Number:
2012.1
Small Business Information
IRDT Solutions, Inc
2850 Mesa Verde Drive East, Unit 103 Costa Mesa, CA -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2013
Title: Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
Agency: DOD
Contract: W911NF-13-C-0074
Award Amount: $519,799.00
 

Abstract:

The technical objective of the Phase II effort is to implement the ideas developed in Phase I work to improve the thermal cycle annealing procedures and HgCdTe epitaxial growth procedures with the goal to demonstrate our approach to reduce the dislocation density to ~1x105 cm-2 and lower in LWIR HgCdTe epitaxial layers grown on Si substrates with a cut off wavelength of ~10µm at 77 K. At the end of the Phase II effort, the goal is to demonstrate fabrication of focal plane arrays of up to 2Kx2K size in Si substrate based LWIR HgCdTe, with new state of the art in detectivity performance, uniformity, operability and producibility.

Principal Investigator:

Honnavalli Vydyanath
Chief Scientist
(714) 717-6675
hvydyanath@gmail.com

Business Contact:

Honnavalli Vydyanath
President
(714) 717-6675
hvydyanath@gmail.com
Small Business Information at Submission:

IRDT Solutions, Inc
2850 Mesa Verde Drive East, Unit 103 Costa Mesa, CA -

EIN/Tax ID: 270150618
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No