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High-quality, low-cost GaN single crystal substrates for high-power devices

Award Information

Agency:
Department of Energy
Branch:
ARPA-E
Award ID:
Program Year/Program:
2014 / SBIR
Agency Tracking Number:
0941-1506
Solicitation Year:
2013
Solicitation Topic Code:
1
Solicitation Number:
N/A
Small Business Information
Fairfield Crystal Technology
8 South End Plaza New Milford, CT 06776-4200
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2014
Title: High-quality, low-cost GaN single crystal substrates for high-power devices
Agency / Branch: DOE / ARPA-E
Contract: DE-AR0000448
Award Amount: $1,200,000.00
 

Abstract:

The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high growth rate and an ability to achieve a superior crystal quality. The novel GaN crystal growth technique can achieve a growth rate significantly higher than that can be achieved using any existing GaN crystal growth technique, including a state-of-the-art hydride vapor phase expitaxy (HVPE) technique. As a result, GaN single crystal boules and wafers will be produced at a low cost and at a high throughput. The novel GaN growth technique, by design, has the capability to reduce dislocation densities to less than 10E4 cm-2 in GaN crystal boules, which enables fabrication of high-performance GaN high-power devices. In addition, the novel growth technique is scalable to produce GaN single crystal boules and wafers of large diameters. Fairfield Crystal team will grow GaN single crystal boules and then fabricate GaN wafers. Stony Brook University Team will conduct crystal defect characterization using variety of tools, including Synchrotron X-ray Topography.

Principal Investigator:

Shaoping Wang
Vice President
(860) 354-2111
swang@fairfieldcrystal.com

Business Contact:

Andrew Timmerman
(860) 354-2111
atimmerman@fairfieldcrystal.com
Small Business Information at Submission:

Fairfield Crystal Technology
8 South End Plaza New Milford, CT 06776-

EIN/Tax ID: 201702779
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No