Innovative Pulsing Technique to estimate junction temperature in Wide-bandgap devices
Agency / Branch:
DOD / NAVY
A simple and reliable method to estimate the channel temperature of GaN high electron mobility transistors (HEMT) is proposed. The technique is based on electrical measurements of performance related figures of merit (IDmax and RON) with a synchronized pulsed I-V setup. As our technique involves only electrical measurement, no special design in device geometry is required and packaged devices can be measured.
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