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High Temperature (300c) Silicon Carbide (SiC)-Based Integrated Gate Drivers for…

Award Information

Agency:
Department of Energy
Branch:
N/A
Award ID:
Program Year/Program:
2014 / SBIR
Agency Tracking Number:
213872
Solicitation Year:
2014
Solicitation Topic Code:
08d
Solicitation Number:
DE-FOA-0001072
Small Business Information
Arkansas Power Electronics International, Inc.
535 W. Research Center Blvd. Fayetteville, AR 72701-6559
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2014
Title: High Temperature (300c) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices
Agency: DOE
Contract: DE-SC0010093
Award Amount: $999,996.27
 

Abstract:

In this Phase II proposal, APEI, Inc. will continue development of its patented high temperature gate driver technology, enabling the next generation of high-efficiency, high power density converters. At the conclusion of Phase II, APEI, Inc. will have designed, fabricated, and tested a high temperature (300 C) SiC application specific integrated circuit (ASIC) gate driver. The fabricated SiC ASIC gate driver will then be integrated into an APEI, Inc. power module, providing for a next generation smart power module solution.

Principal Investigator:

Brett Sparkman
Mr.
4794435759
bsparkm@apei.net

Business Contact:

Sharmila Mounce
Mrs.
smounce@apei.net
Small Business Information at Submission:

Arkansas Power Electronics International, Inc.
535 W. Research Center Blvd. Fayetteville, AR 72701-6559

EIN/Tax ID: 710810115
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No