High Temperature (300c) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices
In this Phase II proposal, APEI, Inc. will continue development of its patented high temperature gate driver technology, enabling the next generation of high-efficiency, high power density converters. At the conclusion of Phase II, APEI, Inc. will have designed, fabricated, and tested a high temperature (300 C) SiC application specific integrated circuit (ASIC) gate driver. The fabricated SiC ASIC gate driver will then be integrated into an APEI, Inc. power module, providing for a next generation smart power module solution.
Small Business Information at Submission:
Arkansas Power Electronics International, Inc.
535 W. Research Center Blvd. Fayetteville, AR 72701-6559
Number of Employees: