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Company Information:

Company Name:
3c Semiconductors
Address:
4370 N.e. Halsey, Suite 233
Portland, OR 97213
Phone:
N/A
URL:
N/A
EIN:
N/A
DUNS:
N/A
Number of Employees:
2
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $71,388.00 1
SBIR Phase II $951,141.00 1

Award List:

Rectifying Junctions for High Temperature, High Power Electronics

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$71,388.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James Delbert Parsons
Abstract:
N/a

Rectifying Junctions for High Temperature, High Power Electronics

Award Year / Program / Phase:
1996 / SBIR / Phase II
Award Amount:
$951,141.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James Delbert Parsons
Abstract:
The single most important type of metal/SiC junction is the n-type, rectifying Schottky diode, because it is the voltage blocking junction in all majority carrier devices. A reliable junction of this type for n-type SiC is the key to its development for high temperature, power conditioning… More