USA flag logo/image

An Official Website of the United States Government

Rectifying Junctions for High Temperature, High Power Electronics

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
28396
Program Year/Program:
1996 / SBIR
Agency Tracking Number:
28396
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
3c Semiconductors
4370 N.e. Halsey, Suite 233 Portland, OR 97213
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1996
Title: Rectifying Junctions for High Temperature, High Power Electronics
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $951,141.00
 

Abstract:

The single most important type of metal/SiC junction is the n-type, rectifying Schottky diode, because it is the voltage blocking junction in all majority carrier devices. A reliable junction of this type for n-type SiC is the key to its development for high temperature, power conditioning electronics. Phase I will demonstrate that osmium is the ideal metal for forming such junctions. Phase II will develop SiC fast recovery diodes and MESFETs that can perform power conditioning and communications circuits applications at thigh temperatures. These devices will form the foundation for developing prototype devices and circuits to address specific applications requirements of DoD systems, and manufacturers of commercial products (e.g. cellular phones) in Phase III. Commercial markets for SiC (especially B-SiC) devices utilizing this type of junction are: high frequency power (B-SiC) solid state power devices, ultra fast recovery diodes for power conditioning, and mixer diodes for cellular phones communication.

Principal Investigator:

James Delbert Parsons
5036901397

Business Contact:

Small Business Information at Submission:

3c Semiconductors
4370 N.e. Halsey, Suite 233 Portland, OR 97213

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No