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A HIGH INTENSITY EXCIMER UV SOURCE FOR SEMICONDUCTOR MANUFACTURING

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
27456
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
27456
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Adelphi Technology, Inc.
2003 E Bayshore Rd Redwood City, CA 94063-4121
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: A HIGH INTENSITY EXCIMER UV SOURCE FOR SEMICONDUCTOR MANUFACTURING
Agency: NSF
Contract: N/A
Award Amount: $64,996.00
 

Abstract:

THE OBJECTIVE OF THIS RESEARCH IS TO EXPLORE THE FEASIBILITY OF DEVELOPING A HIGH INTENSITY UV EXCIMER SOURCE FOR THE DEMANDING REQUIREMENTS OF THE SEMICONDUCTOR MANUFACTURING AND MATERIALS PROCESSING INDUSTRY. EMERGING PROCESSING TECHNOLOGIES NOT REQUIRING A COHERENT SOURCE INCLUDING UV WAFER CLEANING AND PHOTO CVD WILL REQUIRE VERY HIGH UV INTENSITIES OVER LARGE AREAS (100 MW/CM2) CURRENTLY ONLY AVAILABLE FROM EXCIMER LASERS. CONVENTIONAL UV LAMPS ARE INADEQUATE FOR THE TASK. EXCIMER LASERS CANNOT CONVENIENTLY ILLUMINATE A LARGE FIELD SIZE, ARE OFTEN DIFFICULT TO INTEGRATE INTO A PRODUCTION TOOL, AND HAVE A VERY HIGH COST OF OWNERSHIP. THE RESEARCH WILL BE DIRECTED TOWARD ESTABLISHING THE FEASIBILITY OF DEVELOPING A UV EXCIMER LAMP AND EXCITATION SOURCE WITH THE REQUIRED PERFORMANCE: (1) A LAMP AND EXCITATION SOURCE WILL BE DESIGNED AND FABRICATED; (2) THE SPECTRUM AND UV EFFICIENCY WILL BE MEASURED WITH PURE XE (172 NM); AND (3) A PRELIMINARY FULL SCALE DESIGN AND COST ESTIMATE WILL BE PREPARED.

Principal Investigator:

David G Boyers
4153287337

Business Contact:

Small Business Information at Submission:

Adelphi Technology Inc.
2181 Park Blvd Palo Alto, CA 94306

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No