Advanced Technologies/Laboratories Intl

The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic m ...

Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substra ...

Next generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters a ...

Silicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be fe ...

Metal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such ...

A major objective of the proposed work is to generate a preliminary design for a PCMCIA-based vibration data collection system that provides better portability, a higher level of standardization and g ...

During Phase I, we will develop the technology for a field use instrument to determine the residual stress, fatigue damage and remaining service life for aging metal structures. The technology will b ...

GaN-based p-i-n photodiodes are in ideal choice for the Air Force's UV radiation measurements needs since these solid-state detectors are compact, light, and have low power consumption. However, curr ...

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