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SCHOTTKY AND OHMIC CONTACTS FOR B-SILICON CARBIDE

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
12177
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
12177
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1990
Title: SCHOTTKY AND OHMIC CONTACTS FOR B-SILICON CARBIDE
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $74,574.00
 

Abstract:

HIGH POWER SEMICONDUCTORS USING SILICON AND GAAS ARE LIMITED TO ENVIRONMENTS THAT ARE LESS THAN 300 DEG C IN TEMPERATURE DUE TO LOW BANDGAPS, LOW BREAKDOWN FIELDS AND LOW THERMAL CONDUCTIVITIES. 3C-SIC(B-SIC) HAS BEEN IDENTIFIED AS A MATERIAL WITH EXCELLENT POTENTIAL TO FULFILL THE REQUIREMENTS OF A HIGH POWER, HIGH TEMPERATURE SEMICONDUCTOR WITH HIGH RADIATION HARDNESS. THE KEY TO DEVELOPING DEVICES FOR B-SIC IS TO BE ABLE TO CONSISTENTLY PRODUCE INTRINSIC FILMS WITH VERY LOW DEFECTS AND TO DEVELOP SCHOTTKY AND OHMIC CONTACT MATERIALS THAT WILL WITHSTAND HARSH ENVIRONMENTS MUT BE IDENTIFIED. THESE DEVELOPMENTS WILL PERMIT COMPATIBILITY WITH SILICON TECHNOLOGIES AS WELL AS THE INTEGRATION OF B-SIC DEVICES INTO SILICON BASED DEVICES. ATM HAS DEVELOPED UNIQUE SINGLE SOURCE B-SIC DEPOSITION TECHNOLOGY THAT ADDRESSES THE THIN FILM PROBLEM, HOWEVER, CONTACTS REMAIN A MAJOR IMPEDIMENT TO DEVICE FABRICATION. IN PHASE I OF THIS PROGRAM DIFFERENT SCHOTTKY AND OHMIC MATERIALS WILL BE DEVELOPED AND CHARACTERISED. THE RESULTS WILL BE APPLIED TO THE FABRICATION OF A P-N JUNCTION WHICH FORMS THE BASIC BUILDING BLOCK OF EVERY SEMICONDUCTOR DEVICES. PHASE II WILL THEN FOCUS ON OPTIMIZING THE PROCESSES AND ACTUAL DEVELOPMENT OF A DEVICE SUCH AS A FET, JFET, MESFET OR MOSFET.

Principal Investigator:

Soo Hee Tan
2033552681

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
520-b Danbury Rd New Milford, CT 06776

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No