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GROUP IV SEMICONDUCTOR ATOMIC LAYER EPITAXY

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
13154
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
13154
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1990
Title: GROUP IV SEMICONDUCTOR ATOMIC LAYER EPITAXY
Agency / Branch: DOD / NAVY
Contract: N/A
Award Amount: $69,259.00
 

Abstract:

WIDESPREAD APPLICATION OF HIGH PERFORMANCE DEVICES BASED ON III-V, IV-IV, OR DIAMOND COMPOUND SEMICONDUCTORS WILL DEPEND ON THE DEVELOPMENT OF MANUFACTURING METHODS. RECENTLY, DR. MAX YODER OF ONR PROPOSED A RADICALLY NEW GROWTH SEQUENCE APPLICABLE TO THE GROUP IV SEMICONDUCTORS IN GENERAL AND TO DIAMOND IN PARTICULAR. FOR DIAMOND, IT IS ANTICIPATED THAT ALTERNATE INTRODUCTION OF CH4 AND CF4 TO THE DIAMOND GROWTH SURFACE WILL PERMIT ATOMIC LAYER EPITAXIAL GROWTH OF DIAMOND. FUNDAMENTAL SURFACE SCIENCE AND CHEMICAL STUDIES ARE REQUIRED TO ESTABLISH THE DETAILS OF THE GROWTH MECHANISMS. IN PHASE I, ISOTOPIC LABELLING EXPERIMENTS WILL BE COMBINED WITH SURFACE SPECTROSCOPY TO UNEQUIVOCALLY ESTABLISH LAYER BY LAYER GROWTH OF DIAMOND. IN PHASE II, THE PROCESS FOR DIAMOND ALE WILL BE OPTIMIZED AND ITS APPLICABILITY TO THE FABRICATION OF ABRUPT P-N JUNCTIONS DEMONSTRATED.

Principal Investigator:

Bo-yang Lin
2033552681

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
520-b Danbury Rd New Milford, CT 06776

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No