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NOVEL PROCESS FOR THE BULK GROWTH OF SIC SINGLE CRYSTALS

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
14847
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
14847
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1992
Title: NOVEL PROCESS FOR THE BULK GROWTH OF SIC SINGLE CRYSTALS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $500,000.00
 

Abstract:

THE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES WITH WELL-ESTABLISHED SILICON PROCESSING. TECHNOLOGY HAS BEEN DEMONSTRATED FOR PRODUCING OHMIC AND SCHOTTKY CONTACTS, SHALLOW DOPANTS ARE AVAILABLE FOR BOTH P AND N TYPE MATERIALS, AND P-N JUNCTIONS ARE READILY FABRICATED. A MAJOR DEFICIENCY THAT IS PRESENTLY LIMITING THE ACCEPTABILITY OF SIC AS A SERIOUS MATERIAL SYSTEM FOR HIGH TEMPERATURE, HIGH POWER ELECTRONIC APPLICATIONS IS THE LACK OF A COMMERCIALLY AVAILABLE SOURCE OF SEMICONDUCTOR GRADE SIC WAFERS. WE PROPOSE A NOVEL, COMMERCIALLY VIABLE APPROACH FOR THE GROWTH OF BULK SINGLE CRYSTAL 6H-SIC INGOTS. THE PROPOSED TECHNOLOGY DEVELOPMENT USES SEVERAL INNOVATIVE APPROACHES TO CONTROL THE RATE OF SUBLIMATION OF SIC FROM A SOLID SOURCE ROD AND TO SEED THE CRYSTAL GROWTH.

Principal Investigator:

Charles P Beetz Jr
Principal Investigator
2033552681

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
520-b Danbury Road New Milford, CT 06776

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No