Migration Enhanced of (SiC)x(AIN)1-x

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 18173	Program Year/Program: 1992 / SBIR
Agency Tracking Number: 18173	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes

Minority-Owned: Yes

HUBZone-Owned: No

Phase 1: Fiscal Year: 1992

Title: Migration Enhanced of (SiC)x(AIN)1-x

Agency / Branch: DOD / MDA

Contract: N/A

Award Amount: $50,000.00

Abstract:
The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for near term applications since in many ways it be processed like silicon. Several deficiencies presently limit the acceptability of silicon carbide including the commercial availability of semiconductor grade silicon carbide crystals and wafers and the low efficiencies of optoelectronic devices based on this material. Advanced Technology Materials, Inc. has developed a new approach to the growth of silicon carbide crystal which addresses both problems. Successful growth of these crystals will permit the fabrication of extremely efficient and compact solid state UV light sources.

Principal Investigator:
Charles P. Beetz, Phd
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No