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HTSCs as Electrodes in DRAMs

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
18069
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
18069
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1992
Title: HTSCs as Electrodes in DRAMs
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

The continuing drive toward increased circuit densities in dynamic random access memories (DRAMs) has spurred great interest in new dielectric materials that permit greater storage capacitor charge density. Ferroelectrics are particularly attractive because of their intrinsically large dielectric constant, and non-volatile and radiation-hard memory capability. Application of ferroelectrics in microelectronics has been severely limited by materials processing and compability problems. Advanced Technology Materials, Inc., has developed a novel approach to solving these compatibility problems through the utilization of high temperature superconductors (HTSCs) as electrode materials. Their development and subsequent use in DRAMs will allow significant increase in memory storage while affording designers maximum flexibility in device configuration.

Principal Investigator:

Jiming Zhang, Phd
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No