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Doped Silicide OHMIC Contacts To Silicon Carbide

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
19694
Program Year/Program:
1995 / SBIR
Agency Tracking Number:
19694
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1995
Title: Doped Silicide OHMIC Contacts To Silicon Carbide
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $750,000.00
 

Abstract:

OHMIC CONTACTS ARE KEY TO THE IMPLEMENTATION OF SILICON CARBIDE (SIC) HIGH POWER, HIGH TEMPERATURE DEVICES. TO DATE, CONTACTS TO SiC MADE USING CONVENTIONAL TECHNIQUES HAVE DEMONSTRATED NEITHER LOW CONTACT RESISTANCES NOR LONG TERM STABILITY. IN PHASE I WE WILL DEVELOP LOW RESISTANCE SILICIDE BASED OHMIC CONTACTS SPECIFICALLY AIMED AT SiC HIGH TEMPERATURE, HIGH POWER DEVICES. CONTACTS WILL BE FABRICATED USING A NOVEL DOPING TECHNIQUES TO HEAVILY DOPE THE SEMICONDUCTOR-SILICIDE INTERFACE AND VIA A UNIQUE SILICIDE FORMATION PROCESS. CONTROLLED FORMATION OF SILICIDES WILL ELIMINATE THE PROBLEMS OF EXCESS CARBON AND CARBIDE FORMATION AT THE CONTACT INTERFACE. IN PHASE II, WE WILL EVALUATE THE LONG TERM ELECTRICAL AND STRUCTURAL STABILITY OF THE CONTACTS IN HIGH POWER, HIGH TEMPERATURE DEVICES. IN PHASE III, SPECIFIC DOD AND COMMERCIAL DEVICES WILL BE TARGETED FOR MANUFACTURE.

Principal Investigator:

Michael A. Tischler
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No