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Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride

Award Information

Agency:
Department of Defense 		Branch:
Missile Defense Agency 		Award ID:
19619 		Program Year/Program:
1993 / SBIR
Agency Tracking Number:
19619 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1993
Title: Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $60,000.00
 

Abstract:

TITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE THE MANUFACTURING OF CHOICE. UNFORTUNATELY, NO TiN PRECURSORS EXIST THAT ALLOW CVD OF TiN AT LOW TEMPERATURES WITHOUT CONTAMINATION PROBLEMS. IN PHASE I ATM PROPOSES TO DETERMINE THE FEASIBILITY OF DESIGNING NOVEL SOURCE REAGENTS THAT ALLOW THE DEPOSITION OF TiN BY CVD TEMPERATURES BELOW 500 C DEGREE WITHOUT CHLORINE, CARBON OR PARTICULATE CONTAMINATION. THE IDENTIFICATION OF SUCH PRECURSORS WOULD FOR THEIR DEMONSTRATION IN FULL SCALE MEMORY DEVICE FABRICATION IN PHASE II AND THEIR RAPID COMMERCIALIZATION IN PHASE III.

Principal Investigator:

Douglas Gordon
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No