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NOVEL SOURCES FOR TITANIUM NITRIDE CHEMICAL VAPOR DEPOSITION (CVD)

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
21562
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
21562
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1993
Title: NOVEL SOURCES FOR TITANIUM NITRIDE CHEMICAL VAPOR DEPOSITION (CVD)
Agency: NSF
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

TITANIUM NITRIDE (TIN) IS BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMS, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. THIN FILMS OF TIN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) IS THE MANUFACTURING METHOD OF CHOICE. NO TIN PRECURSORS EXIST THAT ALLOW CVD OF TIN AT LOW TEMPERTUES WITHOUT CONTAMINATION PROBLEM. RESEARCHERS ARE DETERMINING THE FEASIBILITY OF DESIGNING NOVEL UNIMOLECULAR SOURCE REAGENTS THAT ALLOW THE DEPOSITION OF TIN BY CVD AT TEMPERATURES BELOW 500 DEGREES CENTIGRADE WITHOUT CHLORINE, CARBON, OR PARTICULATE CONTAMINATION.

Principal Investigator:

Walter P Kosar/douglas Go
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Dr Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No