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Efficient Dopant Activation In P-type III-V Nitrides

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
26231
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
26231
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: Efficient Dopant Activation In P-type III-V Nitrides
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

THE AVAILABILITY OF EFFICIENT BLUE LIGHT EMITTERS WOULD BREAK OPEN COMMERCIAL AND DEFENSE MARKETS IN FULL COLOR DISPLAYS AND HIGH DENSITY OPTICAL STORAGE SYSTEMS. NITRIDE-BASED DEVICES HAVE THE GREATEST POTENTIAL AS HIGH EFFICIENCY EMITTERS BECAUSE OF THEIR DIRECT BANDGAP AND CONVENIENT HETEROSTRUCTURES SYSTEM. HOWEVER, THE LACK OF OF SUITABLE P-TYPE DOPING TECHNOLOGY HAS GREATLY HINDERED DEVELOPMENT OF THESE MATERIALS. IN PHASE I WE WILL DEMONSTRATE REPRODUCIBLE, EFFICIENT P-TYPE DOPING TECHNOLOGY FOR III-V NITRIDES. OUR APPROACH ADDRESSES THE TWO MAIN FACTORS AFFECTING P-TYPE DOPING, STRUCTURAL FACTORS RESULTING FROM LATTICE MISMATCH AND CHEMICAL FACTORS DUE TO DOPANT INTERACTION IN THE SOLID GROWTH. ATM'S UNIQUE EXPERTISE IN SUBSTRATES AND MOCVD PROCESSES PROVIDE SOLUTIONS TO THESE PROBLEMS. THE PHASE II PROGRAM WILL UTILIZE THESE TECHNIQUES TO PRODUCE EFFICIENT BLUE LEDs AND LASERS FOR COMMERCIALIZATION IN PHASE III.

Principal Investigator:

Michael Tischler
2037941100

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No