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High Performance Thin Film Microactuator Materials

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 28230
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1996
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
7 Commerce Drive
Danbury, CT 06810
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr Jeffrey F. Roeder
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract

The potential applications of microelectromechanical systems (MEMS) have only begun to be recognized. This technology demands thin film materials with exceptional microstructural quality for high performance and processes with high yields. For piezoelectric microactuator applications, thin film lead zirconate titanate (PZT) is the leading material choice. Furthermore, substitutional modifications offer the possibility for drastically reduced drive voltages necessary for actuation. A significant opportunity exists to develop a new process for deposition of a thin film microactuator material based on PZT. Metalorganic chemical vapor deposition (MOCVD) is the method of choice because it yields excellent microcrystallinity, has high deposition rates, and scales to large areas. Preliminary results at ATMI indicate that the deposition of high quality substitutionally modified thin films based on PZT is possible by MOCVD. In Phase I, we will develop this process for microactuator applications. Actuation an the piezoelectric coefficients of both unmodified and modified PZT will be measured at Honeywell Technology Center. Phase II will result in a process optimized for microfabricated cantilever devices, which will be fabricated with Honeywell.

* Information listed above is at the time of submission. *

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