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Silicon Carbide UV Photodiode Arrays

Award Information

Department of Commerce
Award ID:
Program Year/Program:
1995 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
Phase 1
Fiscal Year: 1995
Title: Silicon Carbide UV Photodiode Arrays
Agency: DOC
Contract: 336
Award Amount: $50,000.00


UV diode detector arrays have a wide range of both commercial and military applications. Examples include spectral measurement and calibration, pollution monitoring, environmental change monitoring, remote sensing of earth resources, solar UV monitoring, burner monitoring in gas turbines, flame detection in furnaces and for fire detections, etc. SiC is one of the most promising material for UV diode arrays. SiC is sensitive to UV radiation over the 200-400nm range and, because of its large bandgap, is blind to visible and simplifies the use of UV detectors compared to silicon or III-V compounds because there is no interference from other wavelength ranges. The use of SiC also permits on-chip integration of electronics and LEDs as well as the detectors. In Phase I, we will demonstrate the feasibility of SiC UV detectors by fabricating a linear array of p-n junction UV detectors. The diodes will be characterized to determine their sensitivity, frequency response, linearity of response. In Phase II, we will examine integration of the detector arrays with on-chip electronics for additional detetor functionality such as detector multiplexing, frequency response correction and self-calibration.

Principal Investigator:

Norihito Hamaguchi
Research Engineer

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
7 Commerce Drive Danbury, CT 06810

Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No