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Novel Polishing and Reactor Technologies for SiC Epitaxial Growth

Award Information

Department of Defense
Missile Defense Agency
Award ID:
Program Year/Program:
1998 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
Phase 2
Fiscal Year: 1998
Title: Novel Polishing and Reactor Technologies for SiC Epitaxial Growth
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $1,000,000.00


Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ surface preparation. ,Via a combination of mechanical and photoelectrochemical polishing methods for n-type SiC substrate, we will show that lower defect density epitaxial silicon carbide can be achieved. The new full wafer technique will remove surface and sub-surface damage introduced during sawing and polishing as well as chemical contamination that contribute to epitaxial layer defects. Reduction of epi-layer defects will lead to both improved device performance and increased manufacturing yields. In Phase II we will optimize surface preparation work for both 4H-SiC and 6H-SiC substrates based on in-house and customer epi results. In Phase III the protocol will be introduced into our substrate manufacturing process. The development of a commercially viable method for the surface preparation of SiC substrates will have a direct impact on removing unwanted surface morphological features likely to hinder device performance and yield. Our ability to produce epi-ready specular substrates will not only allow faster progress on the device research front but will also result in a highly desirable commercial product.

Principal Investigator:

Nabila Baba-ali

Business Contact:

Small Business Information at Submission:

Advanced Technology
7 Commerce Drive Danbury, CT 06810

Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No