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Radiation hard, nonvolatile, NRDO memory elements

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
41221
Program Year/Program:
1998 / SBIR
Agency Tracking Number:
41221
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1998
Title: Radiation hard, nonvolatile, NRDO memory elements
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $65,000.00
 

Abstract:

Metal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can interact with silicon at process temperatures and lead to a high density of mobile charge traps at the interface. An additional oxide layer between the ferroelectric and silicon has been proposed to serve as a diffusion barrier. In practice, deposition of this barrier oxide typically involves introduction of oxygen at heated silicon wafer surface and an unwanted low permittivity silicon oxide layer is formed on the silicon surface. We recently developed a process that offers the opportunity to produce an interface with minimal formation of interfacial oxide. In Phase I, we will demonstrate the feasibility of this novel process in suppressing parasitic oxide formation. MIS and MFIS capacitors will be fabricated using PZT and SrTiO3 as the ferroelectric and the barrier materials. Phase II will result in an optimized process for MFIS-FET transistors for nonvolatile memory applications, to be fabricated in collaboration with an industrial partner that will be identified in Phase I.

Principal Investigator:

Ing-shin Chen
2037941100

Business Contact:


0
Small Business Information at Submission:

Advanced Technology
7 Commerce Drive Danbury, CT 06810

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No