USA flag logo/image

An Official Website of the United States Government

Company Information:

Company Name:
Advanced Device Technologies,
Address:
2015 Ivy Road, Suite 308
Charlottesville, VA 22903
Phone:
N/A
URL:
N/A
EIN:
N/A
DUNS:
N/A
Number of Employees:
2
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $227,671.00 3

Award List:

Complentary 2-D MESFET for Low Power Electronics

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$79,268.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. Willim C.b. Peatman
Abstract:
The primary objectives of this Phase I effort are to assess the feasibility of developing a p-channel 2-D MESFET and to determine the extent of the significant reduction in power consumption of integrated circuits which may be achieved by utilizing a complementary 2-D MESFET technology. The new FET… More

Nanoelectric Modeling Software Development

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$88,403.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Michael Hurt
Abstract:
This Phase I project has two primary objectives. The first objective is to develop an engineering model of Resonant Tunneling Devices (RTD) to be implemented in AIM-Spice, a commercial software package running under Windows 95/NT. The development of a reliable device model is a prerequisite for… More

Ion-Implanted 2-D MESFET Technology for Wireless Communications

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Mr. Michael J. Hurt
Abstract:
This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped… More