USA flag logo/image

An Official Website of the United States Government

Company Information:

Company Name: Advanced Device Technologies,
City: Charlottesville
State: VA
Zip+4: 22903
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $227,671.00 3

Award List:

Complentary 2-D MESFET for Low Power Electronics

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr. Willim C.b. Peatman
Award Amount: $79,268.00
Abstract:
The primary objectives of this Phase I effort are to assess the feasibility of developing a p-channel 2-D MESFET and to determine the extent of the significant reduction in power consumption of integrated circuits which may be achieved by utilizing a complementary 2-D MESFET technology. The new FET… More

Nanoelectric Modeling Software Development

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Michael Hurt
Award Amount: $88,403.00
Abstract:
This Phase I project has two primary objectives. The first objective is to develop an engineering model of Resonant Tunneling Devices (RTD) to be implemented in AIM-Spice, a commercial software package running under Windows 95/NT. The development of a reliable device model is a prerequisite for… More

Ion-Implanted 2-D MESFET Technology for Wireless Communications

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Mr. Michael J. Hurt
Award Amount: $60,000.00
Abstract:
This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped… More