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128X128 ELEMENT MONOLITHIC DUAL BAND HGCDTE STARING ARRAYS

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
15600
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
15600
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ADVANCED DEVICE TECHNOLOGY, INC.
4 Raymond Ave, Suite #4B Salem, NH 03079
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1992
Title: 128X128 ELEMENT MONOLITHIC DUAL BAND HGCDTE STARING ARRAYS
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $481,772.00
 

Abstract:

MISSILE SEEKERS MUST DETECT TARGETS IN DUAL BANDS (3-5 UM AND 8-12 UM). THEY NOW USE HYBRID ASSEMBLY OF TWO SEPARATE ARRAYS, WHICH INCREASES THE POWER, CONSUMPTION, THE WEIGHT, AND THE COST. WE WILL DEVELOP MONOLITIHIC DUAL BAND 128X128 STARING ARRAYS ON HGCDTE MATERIAL. THE INNOVATION IS THE DETECTION OF BOTH LONG AND SHORT WAVE SIGNALS IN THE SAME PIXEL SIMULTANEOUSLY. FABRICATION METHODS ARE DEVELOPED TO ACHIEVE PIXEL CO-LOCATION. THE METHODS ARE SUCH THAT CROSSTALK AMONG ADJACENT DIODES AND BETWEEN WAVE BANDS ARE ELIMINATED. CIRCUITS ARE DESIGNED TO PERFORM SIMULTANEOUS DETECTION IN TWO WAVE BANDS. A NEW MOCVD EPITAXIAL GROWTH BY PHOTOCHEMICAL TECHNIQUE (200C GROWTHO IS INITIATED (REACTOR 1). DUAL BAND WAFERS AND P-N JUNCTIONS ARE ALREADY GROWN IN A STANDARD MOCVD REACTOR (REACTOR 2). THESE STRUCTURES ARE GROWN WITH A WIDE BAND-GAP CAP LAYER TO IMPROVE PERFORMANCE. A NEW MULTI-LAYER METAL SCHEME IS DEVELOPED TO IMPROVE RELIABILITY. A SET OF MASKS FOR 4X4 ELEMENT TEST ARRAYS ARE DESIGNED AND ALL MASK LEVELS ARE OBTAINED.

Principal Investigator:

Dr Peter J Kannam
Principal Investigator
6038864943

Business Contact:

Small Business Information at Submission:

Advanced Device Technology Inc
3 Budway Unit 29 Nashua, NH 03063

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No