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Totally Monolithic GaAs/HgCdTe Focal Plane Arrays

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
19599
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
19599
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ADVANCED DEVICE TECHNOLOGY, INC.
4 Raymond Ave, Suite #4B Salem, NH 03079
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Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1993
Title: Totally Monolithic GaAs/HgCdTe Focal Plane Arrays
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $54,458.00
 

Abstract:

WE PROPOSE TO DEVELOP A TOTALLY INTEGRATED MONOLITHIC GaAs/HgCdTe FPAs ON GaAs SUBSTRATED. THE INNOVATIVE FEATURES ARE: 1. THE DETECTOR IS FABRICATED DIRECTLY ON THE GaAs MULTIPLEXER SUBSTRATE, WITH THE MONOLITHIC METAL INTERCONNECT INSTEAD OF STANDARD INDIUM BUMPS ALLOWING ARRAY SIZES UP TO 1024x1024 WITH HIGH FRAME RATES. 2. THE FOCAL PLANES WILL INCORPORATE AN ON-CHIP LOW POWER MASSIVELY PARALLEL, HIGH SPEED ADC ENABLING OFF FOCAL PLANE DATA READOUT WITH HIGH IMMUNITY TO OFF CHIP NOISE SOURCES. 3. THE FOCAL PLANE WILL CONTAIN HIGH SPEED DRIVERS FOR REDUCED OUTPUT LINE COUNT COMING OFF FOCAL PLANE, REDUCING COMPLEXITY AND HEAT LOAD. READOUTAND ADC DESIGNS ARE DESCRIBED. DETAILED FABRICATION STEPS TO ACHIEVE MONOLITHIC GaAs/HgCdTe FPAs ARE SHOWN. DURING PHASE I PRELIMINARY TEST CELLS WILL BE DESIGNED AND LAYED OUT, AND EXPERIMENTS WILL BE CONDUCTED TO GROWN HgCdTe ON GaAs SUBSTRATES. DURING PHASE II, A TOTALLY INTEGRATED 4x4 ELEMENT MONOLITHIC GaAs/HgCdTe FPA WILL BE FABRICATED, TESTED AND THE DESIGN OF A 1024x1024 ELEMENT ARRAY WILL BE INITIATED.

Principal Investigator:

Peter Kanam, Phd
6038864943

Business Contact:

Small Business Information at Submission:

Advanced Device Technology,
3 Budway, Unit 29 Nashua, NH 03063

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No