USA flag logo/image

An Official Website of the United States Government

STTR Phase I: Erbium Doped III-Nitride Materials and Photonic Structures for…

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
84868
Program Year/Program:
2007 / STTR
Agency Tracking Number:
0637747
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
III-N TECHNOLOGY, INC.
4627 5th Street Lubbock, TX 79416 4727
View profile »
Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2007
Title: STTR Phase I: Erbium Doped III-Nitride Materials and Photonic Structures for Optical Communications
Agency: NSF
Contract: 0637747
Award Amount: $100,000.00
 

Abstract:

The Small Business Technology Transfer Research (STTR) Phase I project will develop metal-organic chemical vapor deposition (MOCVD) growth technology for the in-situ Er incorporation into III-nitride epilayers and device structures grown on Si substrates. Through optical characterization of Er3+ emissions, optimal growth conditions for obtaining device structures with enhanced emission at the desired optical communications wavelength (1.55 microns) will be identified. If successful, these materials may lead to novel electrically pumped waveguide optical amplifiers that possess advantages of both semiconductor optical amplifier (small size, electrical pumping, ability for photonic integration, etc) and Er-doped fiber amplifier (minimal crosstalk between different wavelength channels in wavelength-division multiplexing (WDM) optical networks). The realization of optical amplifiers based on Er-doped semiconductors would allow the monolithic integration of functional optical devices (light sources, wavelength routers, optical switches, detectors, etc) on single chips to form photonic integrated circuits with unique features. This prospect becomes especially attractive if Er-doped III-nitride materials could be grown on large area silicon substrates because such nitride-on-Si material photonic materials system would be entirely compatible with the standard processes for making silicon computer chips and could open up unprecedented applications including those envisioned for Si photonics.

Principal Investigator:

Jing A. Li
Dr
7853418354
jingli@3n-tech.com

Business Contact:

Hongzing A. Jiang
PhD
7853414483
jiang@3N-Tech.com
Small Business Information at Submission:

3N Technology
2033 PLYMOUTH RD 6745 HOLLISTER AVENUE MANHATTAN, KS 66503

EIN/Tax ID: 481240178
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Kansas State Univ
2 Fairchild Hall
Manhattan, KS 66506 1103
Contact: Jingyu S. Lin
Contact Phone: (785) 532-1614
RI Type: Nonprofit college or university