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4WAVE, INC.
UEI: RUJKM1TWGN88
# of Employees: 11
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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Low-cost device relevant Indium Gallium Nitride (InGaN) or Alternatives
Amount: $97,579.00The project aims to grow device-quality InxGa1-xN, an important semiconductor because the band gap can be shifted widely by varying x, using a new form of plasma sputtering, Biased-Target Deposition ( ...
SBIRPhase I2009Department of Defense Defense Advanced Research Projects Agency -
Transition Metal Oxide Optical Switch
Amount: $70,000.00We propose to test a new sputtering method, Biased Target Deposition (BTD), for growth of polycrystalline VO2 thin films. The BTD method has been shown to be more stable and flexible for reactive depo ...
SBIRPhase I2009Department of Defense Army -
Low Damage Ion Beam Etching Technique and Method for Compositional Profiling of Thin Multilayer Films
Amount: $73,342.00Thin film multilayers of nanometer scale thickness are fundamental to the future of electronics and communications technologies. Chemical depth profiling by ion etching techniques are critical to the ...
SBIRPhase I2003Department of Commerce National Institute of Standards and Technology