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Company Information:

Company Name:
4WAVE, INC.
Address:
22660 Execute Drive
Suite 101
Sterling, VA 20166-
Phone:
(703) 787-9283
URL:
N/A
EIN:
542000866
DUNS:
102768426
Number of Employees:
11
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $240,921.00 3

Award List:

Low Damage Ion Beam Etching Technique and Method for Compositional Profiling of Thin Multilayer Films

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$73,342.00
Agency / Branch:
DOC / NIST
Principal Investigator:
Todd Hylton
Abstract:
Thin film multilayers of nanometer scale thickness are fundamental to the future of electronics and communications technologies. Chemical depth profiling by ion etching techniques are critical to the characterization of these structures. A fundamental problem with current ion etching technologies is… More

Low-cost device relevant Indium Gallium Nitride (InGaN) or Alternatives

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$97,579.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
David Baldwin, VP of R&D
Abstract:
The project aims to grow device-quality InxGa1-xN, an important semiconductor because the band gap can be shifted widely by varying x, using a new form of plasma sputtering, Biased-Target Deposition (BTD). The major objectives are to grow x > 0.05 material on sapphire at 600-800oC (standard) and… More

Transition Metal Oxide Optical Switch

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
David Baldwin, VP R&D – (703) 787-9283
Abstract:
We propose to test a new sputtering method, Biased Target Deposition (BTD), for growth of polycrystalline VO2 thin films. The BTD method has been shown to be more stable and flexible for reactive deposition than previously used techniques, and we test whether VO2 can be driven into different… More