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Low Damage Ion Beam Etching Technique and Method for Compositional Profiling of…

Award Information

Department of Commerce
National Institute of Standards and Technology
Award ID:
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
22660 Execute Drive Suite 101 Sterling, VA 20166-
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2003
Title: Low Damage Ion Beam Etching Technique and Method for Compositional Profiling of Thin Multilayer Films
Agency / Branch: DOC / NIST
Contract: N/A
Award Amount: $73,342.00


Thin film multilayers of nanometer scale thickness are fundamental to the future of electronics and communications technologies. Chemical depth profiling by ion etching techniques are critical to the characterization of these structures. A fundamental problem with current ion etching technologies is that typical ion energies (~1k eV to 20 keV) create extensive damage and intermixing of nanometer thick multilayer structures, thereby degrading depth profile analysis. In this Phase 1 project, processes and equipment will be developed and feasibility will be demonstrated for effective compositional depth profiling of nanometer scale multilayer films using low-energy ion etching. In addition, the research to be performed will determine the applicability of low-energy ion etching to the fabrication of nanometer scale multilayer devices. Phase 2 will develop and deliver to NIST a commercial prototype of a low-energy ion etching system for compositional depth profiling. 4Wave is uniquely qualified owing to its ongoing business in ion beam systems and its unique low-energy ion source technology.

Principal Investigator:

Todd Hylton

Business Contact:

Small Business Information at Submission:

4Wave, Inc.
22977 Eaglewood Court Suite 120 Sterling, VA 20166

Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No