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SBIR Phase I: A Novel Semiconductor Memory Having Both Volatile and…

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
91100
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
0912771
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Zeno Semiconductor
1657 Curtner Ave San Jose, CA 95125-4920
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: SBIR Phase I: A Novel Semiconductor Memory Having Both Volatile and Non-Volatile Modes
Agency: NSF
Contract: 0912771
Award Amount: $93,000.00
 

Abstract:

This Small Business Innovation Research Phase I project seeks to demonstrate the high-density feasibility of a novel memory, which has both volatile and non-volatile functionality. Such memory combines the non-volatile memory's ability to retain information in the absence of power (such as Flash memory) and the fast access speed and reliability of a volatile memory (such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM)). This memory is fabricated using silicon-based fabrication process, eliminating the need of new materials or new process technology developments. One of the many applications of the proposed memory is to enable power-efficient computing applications and mobile devices. A power-efficient memory such as the one proposed in this proposal can reduce the overall data center power consumption by up to 75%. This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).

Principal Investigator:

Yuniarto Widjaja
PhD
6505753555
ywidjaja@zenosemi.com

Business Contact:

Yuniarto Widjaja
PhD
6505753555
ywidjaja@zenosemi.com
Small Business Information at Submission:

Zeno Semiconductor
1657 Curtner Ave San Jose, CA 95125

EIN/Tax ID: 309155794
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No