RADIATION-HARD ANALOG BJT TECHNOLOGY ON BESIO WAFERS

Award Information

Agency: Department of Defense	Branch: Air Force	Award ID: 9380	Program Year/Program: 1990 / SBIR
Agency Tracking Number: 9380	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Aracor
425 Lakeside Drive Sunnyvale, CA 94086 0470
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 2: Fiscal Year: 1990

Title: RADIATION-HARD ANALOG BJT TECHNOLOGY ON BESIO WAFERS

Agency / Branch: DOD / USAF

Contract: N/A

Award Amount: $218,000.00

Abstract:
THE DEVELOPMENT OF ANALOG DEVICES FABRICATED ON DEFECT-FREE ADVANCED SUBSTRATES WITH INCREASED NEUTRON TOLERANCE IS PROPOSED. THIS CONCEPT WILL IMPLEMENT ULTRA-THIN, DEFECT-FREE, SILICON-ON-INSULATOR SUBSTRATES FABRICATED BY BONDING AND ETCH BACK (BESOI) TO DEMONSTRATE LATERAL BIPOLAR DEVICES WITH EXTREMELY LOW BASE RESISTANCE AND RECOMBINATION VOLUME. DEVICES WITH A CUT-OFF FREQUENCY IN EXCESS OF 10GHZ ARE PROPOSED UTILIZING CONVENTIONAL BICMOS PROCESSING PROCEDURES. THESE DEVICES ARE EXPECTED TO IMPROVE NEUTRON-INDUCED DEGRADATION BY AN ORDER-OF-MAGNITUDE OVER CONVENTIONAL ANALOG CIRCUITS. THE PHASE I FEASIBILITY STUDY WILL INCLUDE THE FABRICATION OF SUITABLE TEST STRUCTURE ON BESOI SUBSTRATE MATERIAL; TO DETERMINE THE RECOMBINATION PARAMETERS FOR BOTH N-AND P-TYPE BASE DEVICES BOTH BEFOR AND AFTER NEUTRON IRRADIATION AND PROJECT THE CHARACTERISTICS OF A NEUTRON-HARDENED ANALOG DEMONSTRATION CHIP TO BE DESIGNED, FABRICATED AND VALIDATED IN PHASE II.

Principal Investigator:
Dr L J Palkuti
4087337780

Business Contact:

Small Business Information at Submission:

Advanced Research & Applctns
425 Lakeside Dr Sunnyvale, CA 94086

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No