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RADIATION-HARD ANALOG BJT TECHNOLOGY ON BESIO WAFERS

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
9380
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
9380
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Aracor
425 Lakeside Drive Sunnyvale, CA 94086 0470
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1990
Title: RADIATION-HARD ANALOG BJT TECHNOLOGY ON BESIO WAFERS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $218,000.00
 

Abstract:

THE DEVELOPMENT OF ANALOG DEVICES FABRICATED ON DEFECT-FREE ADVANCED SUBSTRATES WITH INCREASED NEUTRON TOLERANCE IS PROPOSED. THIS CONCEPT WILL IMPLEMENT ULTRA-THIN, DEFECT-FREE, SILICON-ON-INSULATOR SUBSTRATES FABRICATED BY BONDING AND ETCH BACK (BESOI) TO DEMONSTRATE LATERAL BIPOLAR DEVICES WITH EXTREMELY LOW BASE RESISTANCE AND RECOMBINATION VOLUME. DEVICES WITH A CUT-OFF FREQUENCY IN EXCESS OF 10GHZ ARE PROPOSED UTILIZING CONVENTIONAL BICMOS PROCESSING PROCEDURES. THESE DEVICES ARE EXPECTED TO IMPROVE NEUTRON-INDUCED DEGRADATION BY AN ORDER-OF-MAGNITUDE OVER CONVENTIONAL ANALOG CIRCUITS. THE PHASE I FEASIBILITY STUDY WILL INCLUDE THE FABRICATION OF SUITABLE TEST STRUCTURE ON BESOI SUBSTRATE MATERIAL; TO DETERMINE THE RECOMBINATION PARAMETERS FOR BOTH N-AND P-TYPE BASE DEVICES BOTH BEFOR AND AFTER NEUTRON IRRADIATION AND PROJECT THE CHARACTERISTICS OF A NEUTRON-HARDENED ANALOG DEMONSTRATION CHIP TO BE DESIGNED, FABRICATED AND VALIDATED IN PHASE II.

Principal Investigator:

Dr L J Palkuti
4087337780

Business Contact:

Small Business Information at Submission:

Advanced Research & Applctns
425 Lakeside Dr Sunnyvale, CA 94086

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No