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GAAS WAFER TESTING FOR RADIATION-INDUCED TRANSIENT UPSET

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
9382
Program Year/Program:
1991 / SBIR
Agency Tracking Number:
9382
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Aracor
425 Lakeside Drive Sunnyvale, CA 94086 0470
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1991
Title: GAAS WAFER TESTING FOR RADIATION-INDUCED TRANSIENT UPSET
Agency / Branch: DOD / DARPA
Contract: N/A
Award Amount: $243,687.00
 

Abstract:

THE DEVELOPMENT OF A WAFER-LEVEL TESTING TECHNIQUE FOR MULTIGIGAHERTZ GAAS DIGITAL INTEGRATED CIRCUITS TO CHARACTERIZE THE TRANSIENT-RADIATION-INDUCED UPSET LEVEL IS PROPOSED. THIS CONCEPT WILL ALLOW THE OPTIMIZATION OF THE UPSET LEVEL IN HIGH PIN-OUT DENSITY CIRCUITS USING AN ON-SITE, QUICK TURNAROUND PROCEDURE FOR TECHNOLOGY DEVELOPMENT AS WELL AS CIRCUIT SCREENING. THIS NONDESTRUCTIVE TECHNIQUE CAN BE APPLIED TO ESTABLISH THE ULTIMATE UPSET LEVEL WITHOUT EXPENSIVE OFF-SITE QUALIFICATION TESTING. THE PHASE I FEASIBILITY STUDY WILL INCLUDE THE THE IMPLEMENTATION OF SUITABLE SUBBANDGAP LASER SOURCE FOR WAFER-LEVEL SIMULATION, THE DEVELOPMENT OF A SUITABLE DATA BASE TO ESTABLISH CORRELATION BETWEEN LASER AND CONVENTIONAL LINAC SIMULATION FOR VARIOUS TEST DEVICES AND CIRCUITS; AND DEMONSTRATION OF THE APPLICABILITY OF THE LASER SIMULATION TECHNIQUE TO STATE-OF-THE-ART GAAS CIRCUITS BY EXTENDING THE EXPERIMENTAL DATA BASE WITH PHOTORESPONSE SIMULATION.

Principal Investigator:

Dr L J Palkuti
4087337780

Business Contact:

Small Business Information at Submission:

Advanced Research & Applctns
425 Lakeside Dr Sunnyvale, CA 94086

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No