Ultrathin BESOI for Fully Depleted CMOS Applications

Award Information

Agency: Department of Defense	Branch: Navy	Award ID: 25696	Program Year/Program: 1995 / SBIR
Agency Tracking Number: 25696	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Aracor
425 Lakeside Drive Sunnyvale, CA 94086 0470
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 2: Fiscal Year: 1995

Title: Ultrathin BESOI for Fully Depleted CMOS Applications

Agency / Branch: DOD / NAVY

Contract: N/A

Award Amount: $498,312.00

Abstract:
BESOI fabrication techniques will be evaluated to select an optimum approach for manufacturing ultrathin silicon films on 150- and 200-mm diameter wafers. A supplier of such BESOI material will be identified. The baseline will be the SiGe etch stop and strain-sensitive etch method which ARACOR has already demonstrated to be capable of producing defect-free, undoped films that are as thin as 1000 angstrom on 100-mm wafers. ARACOR will demonstrate this BESOI process on 150-mm wafers in Phase I. In addition, a fully-depleted CMOS process flow for ultrathin SOI material, a suitable circuit to demonstrate this process, and a test matrix to validate the process and circuit will also be defined for subsequent use in the Phase II program. An option for Phase I will be to fabricate the 150-mm BESOI substrates needed to begin circuit processing in Phase II.

Principal Investigator:
Everett E. King
4087337780

Business Contact:

Small Business Information at Submission:

Aracor
425 Lakeside Drive Sunnyvale, CA 94086

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No