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Diamond Technology High Temperature Electronics Radiation Hardened Interceptor Communications
Title: Chief Technical Officer
Phone: (321) 727-0328
Email: ghess@aet-usa.com
Title: Chief Financial Officer
Phone: (321) 727-0328
Email: tjs@aet-usa.com
Contact: Jim Davidson
Address:
Phone: (615) 343-7886
Type: Nonprofit College or University
The goal of this program is to develop high-speed interceptor communications solutions that are hardened to space and nuclear radiation, including high altitude nuclear explosions (HANEs). AET will design and develop lateral emission-based diamond integrated logic circuits that have been electrically tested, packaged, and characterized for temperature insensitivity and radiation hardness A laterally configured diamond emission device can offer significant advantages for IC-compatible high-speed and RF applications from its low input and neglible parasitic capacitance features, lithography-controlled small interelectrode gap and versatile emitter geometry, and monolithic integration of multiple device electrodes, all achieved using a simple microfabrication process scheme. The Vanderbilt University Diamond Laboratory built and reported the first diamond lateral emitter. They have now developed a consistent fabrication technique, paralleling IC process technology for nanodiamond lateral field emission devices, operable at very low electric fields and voltages, generating high currents. Diodes and transistors form the major building blocks of an integrated circuit. Monolithic vacuum diodes and triodes have been developed with the nanodiamond lateral field emitter, using consistent and conventional microelectronic processing techniques. The capability of patterning thousands of these devices monolithically on the same substrate has been demonstrated. These low-voltage operating diamond devices can be suitably developed and interconnected, achieving silicon IC equivalent and compatible logic gates.
* Information listed above is at the time of submission. *