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Diamond Technology High Temperature Electronics Radiation Hardened Interceptor…

Award Information

Department of Defense
Missile Defense Agency
Award ID:
Program Year/Program:
2008 / STTR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
AET, Inc.
1900 S. Harbor City Blvd. Suite 225 Melbourne, FL 32901-
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 2
Fiscal Year: 2008
Title: Diamond Technology High Temperature Electronics Radiation Hardened Interceptor Communications
Agency / Branch: DOD / MDA
Contract: W9113M-09-C-0021
Award Amount: $744,386.00


The goal of this program is to develop high-speed interceptor communications solutions that are hardened to space and nuclear radiation, including high altitude nuclear explosions (HANEs). AET will design and develop lateral emission-based diamond integrated logic circuits that have been electrically tested, packaged, and characterized for temperature insensitivity and radiation hardness A laterally configured diamond emission device can offer significant advantages for IC-compatible high-speed and RF applications from its low input and neglible parasitic capacitance features, lithography-controlled small interelectrode gap and versatile emitter geometry, and monolithic integration of multiple device electrodes, all achieved using a simple microfabrication process scheme. The Vanderbilt University Diamond Laboratory built and reported the first diamond lateral emitter. They have now developed a consistent fabrication technique, paralleling IC process technology for nanodiamond lateral field emission devices, operable at very low electric fields and voltages, generating high currents. Diodes and transistors form the major building blocks of an integrated circuit. Monolithic vacuum diodes and triodes have been developed with the nanodiamond lateral field emitter, using consistent and conventional microelectronic processing techniques. The capability of patterning thousands of these devices monolithically on the same substrate has been demonstrated. These low-voltage operating diamond devices can be suitably developed and interconnected, achieving silicon IC equivalent and compatible logic gates.

Principal Investigator:

Glenn T. Hess
Chief Technical Officer

Business Contact:

Thomas J. Sanders, Jr
Chief Financial Officer
Small Business Information at Submission:

1900 S. Harbor City Blvd. Suite 236 Melbourne, FL 32901

EIN/Tax ID: 593226810
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Box 351591, Station B
Nashville, TN 37235
Contact: Jim Davidson
Contact Phone: (615) 343-7886
RI Type: Nonprofit college or university