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An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far…

Award Information

National Aeronautics and Space Administration
Award ID:
Program Year/Program:
2010 / SBIR
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Small Business Information
TechnoScience Corporation
CA Palo Alto, CA 94306-0658
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2010
Title: An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared
Agency: NASA
Contract: NNX10CE02P
Award Amount: $100,000.00


We propose to investigate the feasibility of fabricating a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate a suitably-doped active layer using the well-established bulk crystal-growth process, which guarantees excellent dopant control and extremely low compensating impurities, and 2- grow the blocking layer using an implant-passivation technique which will produce the required high purity and a very sharp transition from the active to blocking layer. These features are key in design and optimization of multi-layered structure of BIBs, and their implementation and quality are crucial in optimum operation of these detectors. The proposed process is a drastic departure from conventional epitaxial methods, such as chemical vapor deposition and liquid phase epitaxy, which have yet to produce far IR BIBs suitable for astronomical instruments. Germanium BIBs will offer extended wavelength response to at least 200

Principal Investigator:

Jam Farhoomand
Principal Investigator

Business Contact:

Jam Farhoomand
Business Official
Small Business Information at Submission:

TechnoScience Corporation
P.O. Box 60658 Palo Alto, CA 94306

EIN/Tax ID: 770328262
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No