Award Year / Program / Phase:
2009 / STTR / Phase I
Agency / Branch:
DOD / NAVY
Research Institution:
Rensselaer Polytehnic Institute
The team of Velox Semiconductor Corporation (Velox) and Rensselaer Polytechnic Institute (RPI), proposes to demonstrate the feasibility of using a single, monolithic, all-GaN integrated Diode(s) Driven Gate (DDG) HFET to achieve normally-off device operation with specifications required for Navy…
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