An Official Website of the United States Government
Planar, High Frequency, Power Conversion Device Technology
- Small Business Information
-
Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
-
Fiscal Year: 2009Title: Planar, High Frequency, Power Conversion Device TechnologyAgency / Branch: DOD / NAVYContract: N00014-09-M-0341Award Amount: $69,485.00
Abstract:
The team of Velox Semiconductor Corporation (Velox) and Rensselaer Polytechnic Institute (RPI), proposes to demonstrate the feasibility of using a single, monolithic, all-GaN integrated Diode(s) Driven Gate (DDG) HFET to achieve normally-off device operation with specifications required for Navy applications. Utilizing this structure, the team intends to demonstrate an initial normally-off device with threshold voltage (VT) higher than 2.5V (Phase I) without jeopardizing other Hetero-junction Field Effect Transistor (HFET) performance indicators, such as specific on-resistance (Ron), maximum current density (Jd,max) and switching frequency (f). This solution will provide a significant device performance and reliability improvement due to the ability to optimize the power transistor in the structure.Small Business Information at Submission:Principal Investigator:
Milan Pophristic
Director of Contract Research
7324693345
mpophristic@veloxsemi.comResearch Institution Information:Velox Semiconductor Corporation
394 Elizabeth Avenue Somerset, NJ 08873EIN/Tax ID: 202688086DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: NoRensselaer Polytehnic Institute
110 8th St.
Troy, NY 12180 3590Contact: Michael ShurContact Phone: (518) 276-2201RI Type: Nonprofit college or university
Award Information
|
Agency: Department of Defense |
Branch: Navy |
Award ID: 90317 |
Program Year/Program: 2009 / STTR |
|
Agency Tracking Number: N09A-023-0584 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |