You are here

Planar, High Frequency, Power Conversion Device Technology

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-09-M-0341
Agency Tracking Number: N09A-023-0584
Amount: $69,485.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N09-T023
Solicitation Number: 2009.A
Timeline
Solicitation Year: 2009
Award Year: 2009
Award Start Date (Proposal Award Date): 2009-06-29
Award End Date (Contract End Date): 2010-04-30
Small Business Information
394 Elizabeth Avenue
Somerset, NJ 08873
United States
DUNS: 556964638
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Milan Pophristic
 Director of Contract Research
 (732) 469-3345
 mpophristic@veloxsemi.com
Business Contact
 Thomas Hierl
Title: President
Phone: (732) 469-3345
Email: thierl@veloxsemi.com
Research Institution
 Rensselaer Polytehnic Institute
 Michael Shur
 
110 8th St.
Troy, NY 12180 3590
United States

 (518) 276-2201
 Nonprofit College or University
Abstract

The team of Velox Semiconductor Corporation (Velox) and Rensselaer Polytechnic Institute (RPI), proposes to demonstrate the feasibility of using a single, monolithic, all-GaN integrated Diode(s) Driven Gate (DDG) HFET to achieve normally-off device operation with specifications required for Navy applications. Utilizing this structure, the team intends to demonstrate an initial normally-off device with threshold voltage (VT) higher than 2.5V (Phase I) without jeopardizing other Hetero-junction Field Effect Transistor (HFET) performance indicators, such as specific on-resistance (Ron), maximum current density (Jd,max) and switching frequency (f). This solution will provide a significant device performance and reliability improvement due to the ability to optimize the power transistor in the structure.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government