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Planar, High Frequency, Power Conversion Device Technology

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
90317
Program Year/Program:
2009 / STTR
Agency Tracking Number:
N09A-023-0584
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
VELOX SEMICONDUCTOR CORP.
394 Elizabeth Avenue Somerset, NJ 08873 8873
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: Planar, High Frequency, Power Conversion Device Technology
Agency / Branch: DOD / NAVY
Contract: N00014-09-M-0341
Award Amount: $69,485.00
 

Abstract:

The team of Velox Semiconductor Corporation (Velox) and Rensselaer Polytechnic Institute (RPI), proposes to demonstrate the feasibility of using a single, monolithic, all-GaN integrated Diode(s) Driven Gate (DDG) HFET to achieve normally-off device operation with specifications required for Navy applications. Utilizing this structure, the team intends to demonstrate an initial normally-off device with threshold voltage (VT) higher than 2.5V (Phase I) without jeopardizing other Hetero-junction Field Effect Transistor (HFET) performance indicators, such as specific on-resistance (Ron), maximum current density (Jd,max) and switching frequency (f). This solution will provide a significant device performance and reliability improvement due to the ability to optimize the power transistor in the structure.

Principal Investigator:

Milan Pophristic
Director of Contract Research
7324693345
mpophristic@veloxsemi.com

Business Contact:

Thomas Hierl
President
7324693345
thierl@veloxsemi.com
Small Business Information at Submission:

Velox Semiconductor Corporation
394 Elizabeth Avenue Somerset, NJ 08873

EIN/Tax ID: 202688086
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Rensselaer Polytehnic Institute
110 8th St.
Troy, NY 12180 3590
Contact: Michael Shur
Contact Phone: (518) 276-2201
RI Type: Nonprofit college or university