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Wide Bandgap Semiconductor Power Inverters and Converters for Next Generation…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
91569
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
B083-029-0596
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
VELOX SEMICONDUCTOR CORP.
394 Elizabeth Avenue Somerset, NJ 08873 8873
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: Wide Bandgap Semiconductor Power Inverters and Converters for Next Generation Transmit Receive (T/R) Module Power Supplies
Agency / Branch: DOD / MDA
Contract: W9113M-09-C-0110
Award Amount: $99,985.00
 

Abstract:

GaN (Gallium Nitride) High Electron Mobility Transistor (HFET) devices face severe thermal control problems as a result of high power densities which result from the need for more power and the ongoing reduction in geometries of individual devices. The device lattice temperature increases under high power causing several detriment effects: a) The carrier phonon scattering rate increases causing a reduction of the carrier mobility and an increase of the device resistance. Under certain bias conditions, the increase of device on-resistance could lead to an increase of the dissipated power and therefore a destructive thermal run-away. b) High lattice temperature increases the reliability risk and decreases the device lifetime. The Velox team proposes transferring and optimizing the existing AlGaN/GaN HFET MOCVD epitaxial deposition and device fabrication process developed by Velox Semiconductor Corp. on Si to a high thermally conductive silicon-on-diamond substrate developed by sp3 Inc. The team also intends to demonstrate initial devices for power inverters and converters in power supplies supporting X-band radar utilizing these substrates. This solution can provide a significant device performance and reliability improvement due to better device thermal management. The complete achievement of the Phase I goals will set the baseline process flow for device fabrication.

Principal Investigator:

Milan Pophristic
Director of Contract Research
7324693345
mpophristic@veloxsemi.com

Business Contact:

Tom Hierl
CEO
7324693345
thierl@veloxsemi.com
Small Business Information at Submission:

VELOX SEMICONDUCTOR CORP.
394 Elizabeth Avenue Somerset, NJ 08873

EIN/Tax ID: 202688086
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No