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Integrated Battlefield Visualization System Using Sensor and Cultural Feature…

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
44855
Program Year/Program:
1999 / SBIR
Agency Tracking Number:
A982-1056
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ALPHATECH, INC.
6 New England Executive Park Burlington, MA 01803
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1999
Title: Integrated Battlefield Visualization System Using Sensor and Cultural Feature Cross-Cueing
Agency / Branch: DOD / ARMY
Contract: A982-1056
Award Amount: $120,000.00
 

Abstract:

Not Available AmberWave proposes to demonstrate and develop III-V metal semiconductor field effect transistors (MESFETs) and high mobility transistors (HEMTs) on Si using its proprietary technology in the epitaxial deposition of high-quality III-V compounds on Si substrates. The technology employs AmberWave¿s proprietary SiGe graded epitaxial layers that allow the lattice mismatch and thermal expansion differences between Ge and Si to be controlled and accommodated during the growth process. AmberWave has also developed process control that allows the reproducible growth of antiphase-domain-free GaAs/Ge interfaces with minimal interdiffusion. The end result in Ge and GaAs device-quality thin films on Si substrates. In Phase I, AmberWave proposes to demonstrate its fabrication sequence for high quality GaAs on Si on 4-inch Si wafers and evaluate a prototype GaAs MESFET on Ge/SiGe/Si

Principal Investigator:

Alan Chao
7812733388

Business Contact:

Small Business Information at Submission:

ALPHATECH, INC.
50 Mall Rd. Bulington, MA 01803

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No