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Modification of Semiconductors for Monolithic Integration of Optoelectronic…

Award Information

Agency:
Department of Defense 		Branch:
Missile Defense Agency 		Award ID:
47503 		Program Year/Program:
2001 / SBIR
Agency Tracking Number:
00-0593 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Altair Center, Llc.
1 Chartwell Circle Shrewsbury, MA 01545
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2001
Title: Modification of Semiconductors for Monolithic Integration of Optoelectronic Devices
Agency / Branch: DOD / MDA
Contract: DASG60-02-C-0005
Award Amount: $750,000.00
 

Abstract:

Altair Center proposes to develop a revolutionary new technology for room temperature selective modification of semiconductor materials adjusting bandgap, strain, refractive index and quantum-confined properties of the semiconductor structures alreadyafter their growth. The selective processing of the semiconductor materials employs a novel process of modification assisted by illumination of the semiconductor with a laser beam. In Phase I of the project we investigated such semiconductor materials asGaAs and InP, and demonstrated that the process of modification changes chemical composition in the near-surface region of the material and eventually creates nanoclusters (quantum dots) in the semiconductor dramatically changing its electromagneticproperties, refractive index and adjusting bandgap. In phase II of the project the demonstrated modification technology will be optimized and applied to fabrication of basic semiconductor-based components critical for monolithic integration ofoptoelectronic device. The large index change can be employed for fabrication of a broad class of semiconductor-based active or passive components using simple direct laser beam writing. These components include relief-free waveguide structures,micoresonators, diffractive grating and diffractive optical elements with high index contrast. The grating having period of the order of wavelength and sufficiently large index contrast may exhibit photonic bandgap structure, resulting in new photoniccrystals with unique properties. In addition to immediate military applications, the proposed technology is an excellent candidate for fabrication of different photonic and diffractive optical products in several markets, including: opticalcommunicaitons, WDM and signal processing, diffractive grating, computer generated holograms, spatial light modulators, diode lasers, photonic bandgap structures, thin film photvoltaic devices, etc.

Principal Investigator:

Sergei Krivoshlykov
Chief Scientist
5088455349
altairctr@aol.com

Business Contact:

Sergei Krivoshlykov
President
5088455349
altairctr@aol.com
Small Business Information at Submission:

ALTAIR CENTER, LLC.
1 Chartwell Circle Shrewsbury, MA 01545

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No