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Extremely low Power on Focal Plane Digital Conversion

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
44856
Program Year/Program:
1999 / SBIR
Agency Tracking Number:
A982-0077
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
AMAIN ELECTRONICS CO., INC.
5301 Longley Lane, Unit 122 Reno, NV 89511 0180
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1999
Title: Extremely low Power on Focal Plane Digital Conversion
Agency / Branch: DOD / ARMY
Contract: A982-0077
Award Amount: $69,955.00
 

Abstract:

Not Available It is clear that only large bulk single crystals of gallium nitride can alleviate the electrical and optical problems that plague present gallium nitride thin films grown on unmatched sapphire substrates. Therefore we propose to produce large bulk single crystals of gallium nitride by starting with perfectly lattice-matched LiGaO2 substrates and utilizing the rapid growth rated affordable by halide vapor phase epitaxy (HVPE). Anticipated growth rates will be 50 to 100 microns per hour. First a thin buffer layer of GaN will be grown by MOCVD on the new LiGaO2 substrates to guard against corrosion by HC1. Our new hybrid MOCVD/HVPE reactor will allow all processing to be performed in on cycle. The oxide substrates will subsequently be removed by wet chemical etching, leaving large area free standing wafers of gallium nitride. Such wafers will be made available commercially by Crystal Photonics Inc for homoepitaxial growth of gallium nitride films. With a conducting substrate, present device contacting problems will be eliminated. Very low defect densities will induce high power densities in blue diode lasers. In Phase I, we shall prepare blue GaN light-emitting diodes on our new wafers to demonstrate their utility. Lasers will be produced during Phase II

Principal Investigator:

William Mandl
8055770583

Business Contact:

Small Business Information at Submission:

AMAIN ELECTRONICS CO., INC.
1875 Angus Ave., Unit C Simi Valley, CA 93063

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No