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High Performance GaN High Electron Mobility Transistors on Flexible Substrates
- Small Business Information
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AMBP Technology Corporation201 Circle Drive North Suite 102-103 Piscataway, NJ 08854 3723View profile »Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2004Title: High Performance GaN High Electron Mobility Transistors on Flexible SubstratesAgency / Branch: DOD / DARPAContract: W31P4Q-04-C-R361Award Amount: $99,000.00
Abstract:
AMBPTech in collaboration with Dr Wayne Anderson's group at SUNY Buffalo proposes to develop a technology for manufacturing high performance GaN transistors on roll to roll flexible non-conducting foils. This effort will transfer the leading research done at the University of Buffalo in the area of high mobility thin film transistors on thin polyimide foils to AMBP Tech which will leverage propietary processes in thin film deposition and laser annealing to produce high mobility material (~2000cm2/Vs). Phase II will consist of optimizing the deposition and annealing parameters, as well as monolithically fabricating arrays of slot antennas, resistors, capacitors and HEMTs. The latter effort will create an array of MMICs that will prove the concept that a high angular resolution antenna for radar applications can be monolithically fabricated.Small Business Information at Submission:Principal Investigator:
Nehal Chokshi
Technical Business Development Mgr
7166390632
nehalchokshi@ambptech.comAMBP TECH CORP.
c/o University Buffalo Incubator, 1576 Sweet Home Amherst, NY 14228EIN/Tax ID: 161524755DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Defense Advanced Research Projects Agency |
Award ID: 68840 |
Program Year/Program: 2004 / SBIR |
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Agency Tracking Number: 04SB2-0035 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |