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High Energy Density and High Thermally Rated Pulsed Power Capacitor Devices

Award Information

Agency:
Department of Defense
Branch:
Office of the Secretary of Defense
Award ID:
71951
Program Year/Program:
2004 / SBIR
Agency Tracking Number:
O043-EP7-1221
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
AMBP Technology Corporation
201 Circle Drive North Suite 102-103 Piscataway, NJ 08854 3723
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2004
Title: High Energy Density and High Thermally Rated Pulsed Power Capacitor Devices
Agency / Branch: DOD / OSD
Contract: FA8650-05-M-2503
Award Amount: $100,000.00
 

Abstract:

The proposed program by AMBP Tech and Professor Sarjeant's group at SUNY Buffalo will develop and demonstrate a rapid large area deposition process of high energy density amorphous fluorinated carbon (a-C:F) films onto thin aluminum (4um thin) electrode substrates. The innovative research consists of utilizing AMBP Tech's patented high deposition rate technologies of LAMBD or PAMBD tools to optimize the stoichiometry and morphology of a-C:F films in terms of the energy density. Feedback will be provided by evaluating the electrical characteristics of the films via the unique Partial Discharge (PD) analytical setup of the Energy Systems Institute (ESI) directed by Professor Sarjeant.

Principal Investigator:

Nehal Chokshi
Technical Business Development Mgr
7166390632
nehalchokshi@ambptech.com

Business Contact:

Gary Tompa
President
7323029274
gstompa@aol.com
Small Business Information at Submission:

AMBP TECH CORP.
c/o University Buffalo Incubator, 1576 Sweet Home Amherst, NY 14228

EIN/Tax ID: 161524755
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No