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Company Information:

Company Name: American Semiconductor, Inc.
City: Boise
State: ID
Zip+4: 83705-7368
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phone: (208) 336-2773

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $1,416,624.00 14
SBIR Phase II $3,099,219.00 4

Award List:

Novel multilayer MIM Damascene Capacitor

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Douglas R. Hackler, President
Award Amount: $69,265.00
Abstract:
"This proposal is for a (Metal Insulator Metal) MIM multilayer capacitor design that achieves higher capacitance density through the use of large electrode surface area within a small chip dimension utilizing a high-k dielectric in a multi-Damascenefabricated approach consistent with low temperature… More

Foundry Flexfet(c)SOI, a Commercial Revolution in Rad-Hard Processing

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Douglas R. Hackler Sr., Principal Investigator
Award Amount: $69,589.00
Abstract:
"Low cost, high-frequency, radiation-tolerant wafer fabrication for next generation electronic circuits is limited by domestic manufacturing capability. General availability of inherently radiation tolerant silicon-on-insulator (SOI) process technology tothe fabless design community is limited to… More

High-k Dielectric Research for the Development of High Performance Compact Capacitors

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / OSD
Principal Investigator: Richard Hayhurst, Sr. Process Development E
Award Amount: $99,683.00
Abstract:
"Development of compact, high energy, pulse power capacitors is the gating technology for Pulse Forming Networks (PFNs) used in directed energy and kinetic energy weapons and microwave systems. This proposal is to explore high permittivity (high-қ)dielectric films and superior electrode… More

Advanced Commercially Available Inherently Radhard Primitive Cell Designs.

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Kelly DeGregorio, Design Engineer
Award Amount: $99,999.00
Abstract:
The Air Force Research Laboratory (AFRL), Military Satellite Communication (MILSATCOM), and National Aeronautics and Space Administration (NASA) have a current and future need for advanced commercially available inherently radhard primitive cell libraries to support new designs for satellites and… More

Rad-hard Reconfigurable Bi-Directional Level Shifters Technology for Micro- and Nanosatellites

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency: NASA
Principal Investigator: Kelly DeGregorio, Principal Investigator
Award Amount: $59,333.00
Abstract:
Various technologies available to space system designers that operate at different voltage levels. It is, however, important to interface, maintain, and update these systems. For example, the Sun Earth Connection (SEC) missions are likely to have a variety of experiments needing to be accomplished… More

Commercially Rad-hard Advanced Digital Library (CRADL).

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Kelly DeGregorio, Design Engineer
Award Amount: $749,991.00
Abstract:
The Air Force Research Laboratory (AFRL), U.S. Air Force and agencies like the National Aeronautics and Space Administration (NASA) have a current and future need for advanced commercially available inherently rad-hard primitive cell libraries to support new designs for satellites and other… More

Silicon on Insulator Pixel Detector for the Linear Collider

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency: DOE
Principal Investigator: Richard A. Hayhrust, Mr.
Award Amount: $94,145.00
Abstract:
The current generation of hybrid particle detectors at the International Linear Collider (ILC) falls well short of meeting the mass and resolution requirements: mass less than 0.1 radiation length/layer, resolution speed in the range of

Low-Power, Rad-hard Reconfigurable, Bi-directional Flexfet? Level Shifter ReBiLS for Multiple Generation Technology Integration for Space Exploration

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency: NASA
Principal Investigator: Kelly J. DeGregorio, Principal Investigator
Award Amount: $599,909.00
Abstract:
The many different generations of integrated circuit (IC) technologies required for new space exploration systems demand designs operate at multiple and often incompatible voltages. Extended utilization of current and development of new space exploration systems require multiple voltage levels be… More

International Linear Collider Pixel Array Vertex Detector Development

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency: DOE
Principal Investigator: Richard Hayhurst, Dr.
Award Amount: $99,997.00
Abstract:
During the past century, physicists have explored subatomic particles in an attempt to understand the fundamental components of the universe, explain the origin of mass, and probe the possibility of an extra-dimensional universe. To advance these explorations, scientists from around the world are… More

Direct Write via Digital Beam Processing for Rad-Hard Flexfet CMOS

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Douglas R. Hackler, President & CEO
Award Amount: $99,917.00
Abstract:
The is an effort to increase radiation hardness/survivability of microelectronics through innovation of production processes and capabilities by establishing an economically viable low-volume sub-65nm rad-hard foundry CMOS capability based on Digital Beam Processing (DBP) technology. American… More

Ultra Low Power, High Performance Microprocessor Core for Military and Space Applications

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: David A. Roberts, Sr. Design Engineer
Award Amount: $99,869.00
Abstract:
For Phase I, an ultra low power, high performance microprocessor core using a combination of double-gated and independent double-gated FlexfetT SOI CMOS technology from American Semiconductor will be designed to address the requirements of military and space communication systems. High integration… More

Next-Generation Detector and Imager Development

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency: DOE
Principal Investigator: Richard Hayhurst, Dr.
Award Amount: $99,971.00
Abstract:
Improvements in silicon-on-insulator (SOI) technology have resulted in development of monolithic chip designs for radiation image sensors and particle detectors by facilitating the use of the handle silicon layer for the detectors and the SOI layer for the readout circuits. Unfortunately, even the… More

Next-Generation Detector and Imager Development

Award Year / Program / Phase: 2011 / SBIR / Phase II
Agency: DOE
Principal Investigator: Richard Hayhurst, Dr.
Award Amount: $999,954.00
Abstract:
Existing silicon on insulator (SOI) pixel detectors which integrate single gate transistors with substrate diodes are limited by two key problems. First, the SOI transistor performance is degraded by the large potentials that must be applied to the substrate to fully deplete the diodes. Secondly,… More

Ultra Low Power, Radiation Hardened, Reconfigurable Analog-to-Digital Converter

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: DOD
Principal Investigator: Dale Wilson, Director, Design and Test – (208) 336-2773
Award Amount: $99,963.00
Abstract:
The goal of this project is to develop an ultra low power (ULP), radiation hardened, reconfigurable analog-to-digital converter (ADC) in the 130nm Flexfet Independently Double Gated SOI CMOS process. Satellites include a large number of sensors which perform both generic system functions and… More

High Performance, Ultra Low Power SPA-1 ASIC for Space Plug-and-Play Avionics

Award Year / Program / Phase: 2011 / SBIR / Phase II
Agency: DOD
Principal Investigator: Dave Roberts, Design Manager – (208) 336-2773
Award Amount: $749,365.00
Abstract:
ABSTRACT: The Space Plug-and-play Avionics (SPA) initiative is designed to improve the ability of the US military to respond to rapidly changing operational needs by creating, integrating, and launching a new spacecraft in less than one week. This would provide major benefits to war fighters on… More

A 45 nm Low Cost, Radiation Hardened, Platform Based Structured ASIC

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: NASA
Principal Investigator: William Tiffany, Principal Investigator
Award Amount: $124,926.00
Abstract:
The proposed 45 nm radiation hardened platform based structured ASIC architecture offers the performance and density expected of a custom ASIC with the low manufacturing cost associated with a structured ASIC. The low cost, high performance customization of the structured ASIC portion of the chip is… More

Conformal Load Bearing Antenna Structure

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOD
Principal Investigator: Richard Chaney, General Manager – (208) 336-2773
Award Amount: $149,990.00
Abstract:
ABSTRACT: American Semiconductor will develop and demonstrate structural integration of a conformal load bearing antenna structure (CLAS). Future aircraft will incorporate distributed electronics, sensors, and flight control transducers directly into the composite airframe. For near-term Air… More

FleX-3D Wafer Processing for Chip Stacking and Interconnect

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency: DOE
Principal Investigator: Dale Wilson, Mr.
Award Amount: $149,977.00
Abstract:
Reliable, readily-manufacturable technologies are needed to create the next generation of high-density, high-functionality 3D integrated circuits (ICs) for integrating silicon pixel detectors with CMOS read-out ICs. Current methods for 3D IC development are severely limited by the thickness of the… More