Novel multilayer MIM Damascene Capacitor
Agency / Branch:
DOD / MDA
"This proposal is for a (Metal Insulator Metal) MIM multilayer capacitor design that achieves higher capacitance density through the use of large electrode surface area within a small chip dimension utilizing a high-k dielectric in a multi-Damascenefabricated approach consistent with low temperature process requirements. Capacitors, either realized as discrete elements in thin-film technologies, or as integrated components in IC processes, are essential in advanced electronic circuits. Highperformance multilayer capacitors can be used in radio frequency (RF) circuits for oscillators, phase-shift networks and coupling/bypass. With higher linearity and dynamic range, multilayer capacitors could be very useful in analog circuits. Additionally,they could be applied to reduce noise coupling in digital circuit regions adjacent to analog circuitry in mixed signal ICs. Within MPUs, multilayer capacitors could be used for decoupling. Recent innovations in MIM structures and high-k dielectricmaterials provide excellent capacitor performance enhancements but have no tolerance for high temperature annealing post formation of the MIM structure. ANTICIPATED BENEFITS: Reduction in switching noise, enabling of programmable capacitors, high precisioncapacitance, reduced die area, improved resistance, reduced inductance and less dielectric absorption.POTENTIAL COMMERCIAL APPLICATIONS: Decoupling capacitors in MPUs. High precision application in RF c
Small Business Information at Submission:
American Semiconductor, Inc.
5755 W. Hollilynn Dr. Boise, ID 83709
Number of Employees: