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A New Class Of High Efficiency, High Specific Power, Multi-junction…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
78574
Program Year/Program:
2006 / SBIR
Agency Tracking Number:
F051-023-3480
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
AONEX TECHNOLOGIES, INC.
129 North Hill, Suite #108 Pasadena, CA 91106
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2006
Title: A New Class Of High Efficiency, High Specific Power, Multi-junction Photovoltaic Cells Using Wafer Bonding And Layer Transfer
Agency / Branch: DOD / USAF
Contract: FA9453-05-M-0099
Award Amount: $99,178.00
 

Abstract:

The objective of this proposal is to demonstrate the feasibility of a process for producing ultra-high conversion efficiency (37-41%) AM0 multijunction solar cells from dislocation-free non-lattice matched heterostructures using a proprietary wafer bonding / layer transfer process. The overall cell fabrication process will yield a two terminal, series-connected four junction InGaP/GaAs/InGaAsP/InGaAs/InP/Si solar cell. Specifically, as a proof of principle, we will transfer of Ge layers < 500 nm thick and 50 mm in diameter onto Si substrates, and then use the resulting Ge/Si substrates as epitaxial growth templates for high bandgap InGaP/GaAs tandem cells. We will also transfer < 500 nm thick InP layers and 50 mm diameter onto Si substrates and use the InP/Si substrates as epitaxial growth templates for low bandgap InGaAsP/InGaAs tandem cells. Device active region structure will be characterized via electron microscopy, X-ray diffraction, and minority carrier lifetime will be characterized via time-resolved photoluminescence. The dark and AM0-illuminated current-voltage characteristics of an InGaP/GaAs dual junction cell on Ge/Si templates will be determined. The results obtained will be used to estimate the overall four junction cell efficiency potential and guide development of a commercial prototype four junction cell process in Phase II.

Principal Investigator:

James Zahler
Senior Scientist
6265839101
james.zahler@aonextech.com

Business Contact:

Sean Olson
President
6265839101
sean.olson@aonextech.com
Small Business Information at Submission:

AONEX TECHNOLOGIES, INC.
129 North Hill, Suite #108 Pasadena, CA 91106

EIN/Tax ID: 710965636
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No